.MODEL MNAME DIO <Param=value>
DXXXXXXX N1 N2 MNAME <AREA>> <OFF> <IC=VD> <TEMP>
Additional Information
More details can be found in the HyperSpice chapter in Extended Definitions for Advanced Users.DBRIDGE 2 10 DIODE1
DCLMP 3 7 DMOD 3.0 IC=0.2
The D device is a junction diode.
N1 and N2 are the positive and negative nodes, respectively.
N1 is the Anode and N2 is the Cathode.
MNAME is the model name, AREA is the area factor, and OFF indicates an (optional) starting condition on the device for dc analysis. If the area factor is omitted, a value of 1.0 is assumed. The (optional) initial condition specification using IC=VD is intended for use with the UIC option on the .TRAN control line, when a transient analysis is desired starting from other than the quiescent operating point. The (optional) TEMP value is the temperature at which this device is to operate, and overrides the temperature specification on the .OPTION control line.
name | parameter | units | default | example | area | |
---|---|---|---|---|---|---|
1 | IS | saturation current | A | 1.0e-14 | 1.0e-14 | * |
2 | RS | ohmic resistance | Ω | 0 | 10 | * |
3 | N | emission coefficient | - | 1 | 1.0 | |
4 | TT | transit-time | sec | 0 | 0.1ns | |
5 | CJO | zero-bias junction capacitance | F | 0 | 2pF | * |
6 | VJ | junction potential | V | 1 | 0.6 | |
7 | M | grading coefficient | - | 0.5 | 0.5 | |
8 | EG | activation energy | eV | 1.11 | 1.11 | |
9 | XTI | saturation-current temp. exp | - | 3.0 | 3.0 | |
10 | KF | flicker noise coefficient | - | 0 | ||
11 | AF | flicker noise exponent | - | 1 | ||
12 | FC | coefficient for forward-bias depletion capacitance formula | - | 0.5 | ||
13 | BV | reverse breakdown voltage | V | infinite | 40.0 | |
14 | IBV | current at breakdown voltage | A | 1.0e-3 | ||
15 | TNOM | parameter measurement temperature | °C | 27 | 50 |